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Revolutionary h-BN Atomristors Transform Neuromorphic Computing

2/17/2025

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Summary

Story summary

Hexagonal boron nitride (h-BN) atomristors are making waves in neuromorphic computing, showcasing an impressive memory window of over 4 billion and a remarkably low leakage current of just 0.24 pA. With power consumption at a mere 3 × 10^-14 W, these devices hold great promise, though variability challenges remain, urging further exploration for real-world use.

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Story summary

Hexagonal boron nitride (h-BN) atomristors are making waves in neuromorphic computing, showcasing an impressive memory window of over 4 billion and a remarkably low leakage current of just 0.24 pA. With power consumption at a mere 3 × 10^-14 W, these devices hold great promise, though variability challenges remain, urging further exploration for real-world use.