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Fudan University Unveils Revolutionary 400 Picoseconds Memory Device

4/21/2025

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Summary

Story summary

Chinese researchers at Fudan University have unveiled "PoX," a groundbreaking flash memory device that stores data at an astonishing speed of 400 picoseconds per bit. This innovative non-volatile memory surpasses traditional RAM, paving the way for lightning-fast AI applications. The team envisions PoX revolutionizing smartphones and computers, effectively eliminating storage bottlenecks.

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Story summary

Chinese researchers at Fudan University have unveiled "PoX," a groundbreaking flash memory device that stores data at an astonishing speed of 400 picoseconds per bit. This innovative non-volatile memory surpasses traditional RAM, paving the way for lightning-fast AI applications. The team envisions PoX revolutionizing smartphones and computers, effectively eliminating storage bottlenecks.