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Breakthrough: Boron Arsenide Rivals Diamond as Top Semiconductor

11/14/2025

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Story summary
  • The University of Houston researchers report boron arsenide (BAs) achieving >2,100 W/m·K at room temperature, rivaling diamond.
  • This finding challenges long-held theories and suggests BAs could be a superior semiconductor, potentially outperforming silicon.
  • The team purified BAs crystals to boost conductivity using advanced methods.
  • The study was conducted with the University of California, Santa Barbara, and Boston College, aiming to transform heat management in electronics, electric vehicles, and data centers.