Story perspectives

Breakthrough Material Promises Faster, Energy-Efficient Electronics

11/26/2025

Summary

Story summary

Researchers from the University of Warwick and the National Research Council of Canada have achieved the highest electrical conductivity in a silicon-compatible material.
They developed a nanometer-thin, compressively strained germanium layer on silicon, called compressively strained germanium on silicon (cs-GoS).
cs-GoS reached a record hole mobility of 7.15 million cm^2 V^-1 s^-1, with potential to enable faster, energy-efficient electronics and applications in quantum information processing and artificial intelligence hardware.

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Story summary

Researchers from the University of Warwick and the National Research Council of Canada have achieved the highest electrical conductivity in a silicon-compatible material.
They developed a nanometer-thin, compressively strained germanium layer on silicon, called compressively strained germanium on silicon (cs-GoS).
cs-GoS reached a record hole mobility of 7.15 million cm^2 V^-1 s^-1, with potential to enable faster, energy-efficient electronics and applications in quantum information processing and artificial intelligence hardware.