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Story summary
- ETH Zurich researchers led by Professor Jonathan Home used a trapped beryllium ion to map fields above a chip.
- A Penning trap with electric and magnetic fields positioned the ion from 50 µm to 450 µm over a 200 by 200 µm area, enabling disconnection from voltages.
- The ion detected electric fields as low as 10 nanovolts per meter in one second, prompting researchers to compare maps with theoretical models to locate chip-generated noise.
