Story perspectives

Samsung Plans 2028 High NA EUV DRAM Mass Production

By Drooid · Sep 14, 2026, 2:57 PM UTC · How we work

Summary

Story summary

Intel processed over one million wafers with ASML’s $400 million High NA EUV lithography tools.
Intel leads a three-year initiative to shift photomasks from 6-inch to 12-inch for High NA lithography.
Samsung Electronics plans High NA EUV DRAM mass production in 2028, an industry first.
SK Hynix intends to adopt High NA EUV for DRAM production in 2028.

1 of 1

Story summary

Intel processed over one million wafers with ASML’s $400 million High NA EUV lithography tools.
Intel leads a three-year initiative to shift photomasks from 6-inch to 12-inch for High NA lithography.
Samsung Electronics plans High NA EUV DRAM mass production in 2028, an industry first.
SK Hynix intends to adopt High NA EUV for DRAM production in 2028.