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CXMT Launches Mass Production of Fifth-Generation DRAM Platform

By Drooid · · How we work

Core Event

On September 20, ChangXin Memory Technologies (CXMT) announced that its fifth-generation DRAM process, the G5 platform, has entered mass production. The platform reduces the half-pitch of the memory-cell array to 11.95 nm using self-aligned quadruple patterning (SAQP) and yields at least 50 % more dies per wafer than the previous generation. Two 24-gigabit LPDDR5X products, each 50 % higher in capacity, were also placed into volume production.

Background & Context

CXMT, listed on Shanghai’s STAR Market in 2026, is China’s largest DRAM maker and seeks a domestic alternative to Samsung, SK Hynix and Micron. While the incumbents use EUV lithography for 10-nm-class processes, CXMT relies on DUV lithography repeated four times (SAQP) due to U.S. export restrictions.

Data & Statistics

  • Product density: 24-Gb LPDDR5X chips hold 3 GB per die, 50 % more than the prior 16-Gb parts.
  • Market share (Q2 2026): 10 % of global DRAM shipments (Counterpoint).
  • Revenue share (Q2 2026): 9.5 % of global DRAM revenue, fourth behind Samsung, SK Hynix and Micron (TrendForce).

Official Statements & Responses

CXMT’s vice president and head of marketing, Luo Xiaodong, said the process capability is now comparable to the most advanced mass-produced nodes. He noted the G5 platform can supplement supply for smartphones and portable devices and mentioned ongoing work on NAND flash, LPDDR6 and fifth-generation HBM3E.

Conflicting Reports & Gaps

1. The 11.95-nm figure applies only to a specific core structure, making direct comparison with “12-nm-class” processes used by rivals difficult.

2. The reported 50 % die-per-wafer increase reflects total dies before defect screening; yield rates and monthly output volumes were not disclosed.

Verbatim Quotes

  • “Our process capability is now ?on par with the most advanced mass-produced nodes out there in the industry,” — Luo Xiaodong

What’s Next

CXMT has formalized mass production of LPDDR6 and reported trial production of HBM3E. Citi projects global DRAM demand to grow 30 % in 2027 and 35 % in 2028, while supply is expected to expand only 19 % and 22 %, indicating a potential gap driven by AI-related workloads.